RF GaN Market Size to Hit USD 5.2 Billion by 2030 | Analysis By Type, Application, and Region

Research Reports

Mar 20, 2023

RF GaN Market Insights

According to MRFR analysis, the global RF GaN Market is expected to register a CAGR of ~ 31% from 2021 to 2030 and hold a value of over ~USD 5.2 billion by 2030.

GaN transistors are finding their way into radio applications owing to their superior frequency characteristics. To upsurge productivity and broaden bandwidth to meet the continuously increasing data transmission rate, RF GaN is vital to wireless infrastructure. The RF GaN market is anticipated to be significantly influenced by increasing 5G technology usage and wireless communication improvements. GaN power transistors are becoming more extensively used, which may also be advantageous for telecom suppliers. Owing to an increase in significant investments in GaN technologies, the RF GaN market has seen substantial growth in several industries. GaN enables higher frequencies in more sophisticated applications, counting radar, phased arrays, base transceiver stations for cable TV (CATV), and defense communications, thanks to the continuing advancements in gallium nitride (GaN) technology.

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Key Players

Some of the key market players are-

  • NXP Semiconductors NV (Netherlands)
  • STMicroelectronics NV (Switzerland)
  • Aethercomm Inc. (U.S.)
  • ROHM Semiconductors (Japan)
  • Analog Devices Inc. (U.S.)
  • Toshiba Corporation (Japan)
  • Cree Inc. (U.S.)
Report Scope:

Report Attribute/Metric

Details

  Market Size in 2030

  USD 5.2 Billion

  Growth rate:

  CAGR of 31% from 2022 to 2030

  Forecast Period

  2021-2030

  Report Coverage

  Revenue Forecast, Competitive Landscape, Growth Factors, and Trends

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Regional Analysis

Asia-Pacific dominated the market and is projected to register a CAGR of 19.3% during the estimated period. China, Japan, Taiwan, and South Korea account for around 66% of the global market for distinct semiconductors. In military applications, owing to the upsurge of T/R systems in airborne radar, GaN devices are replacing bulky traveling wave-tube (TWT)-based systems, confirming that defense will continue among the primary drivers of the GaN market.

North America is the second major region. It is projected to reach an anticipated value of USD 451 million by 2030, registering a CAGR of 18% during the estimated period. People who make, design, and training semiconductors in North America are among the first to use new technologies. The development of the RF GaN market in North America is strongly connected with the growth of end-user sectors like telecom, aerospace, defense, and others. The government’s strategy is probably going to lift market expansion

Europe is the third major region. The European region is home to some vital tech hubs worldwide and a substantial driver and adopter of modern technology. The market is expanding because of the augmented usage of modern technologies and semiconductors across several regional sectors.

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Market Segmentation

The global RF GaN Market has been segmented into type and application.

Based on the Type, The global RF GaN Market has been segmented into Gan on Sic, Gan on Silicon, and Gan on Demand

Based on the Application, The global RF GaN Market has been segmented into 5G Wireless Infrastructure, Aerospace, and Military & Defence, Others

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